The observed prevalences in this study were as follows: overweight, 20% in males and 26% in females; obesity, 8% in males and 6% in females; hypertension, 17% in males and 14% in females; and resting tachycardia, 22% in males and 24% in females. In both genders, BMI showed significant correlations (P<0.001 or P<0.01 or P<0.05) with SBP, DBP and HR after controlling selleckchem for age and physical activity status, and SBP indicated the strongest association with BMI. Furthermore, the prevalence of hypertension and tachycardia increased with an increase in BMI level, whereas overweight/obese

subjects indicated significantly higher risk of hypertension than did the non-overweight/obese controls. The present findings therefore strengthen the previously reported

usefulness of BMI in predicting cardiovascular risks and add to our understanding CT99021 of the early development of obesity-related cardiovascular abnormalities in young adults and the need to prevent obesity early in life and to avoid its unfavourable life-threatening consequences later in life. Journal of Human Hypertension (2010) 24, 230-236; doi:10.1038/jhh.2009.71; published online 10 September 2009″
“Traps at the (110)Si/SiO2 interface are investigated by combining electrical methods with electron spin resonance (ESR) measurements, and the results are compared to the well studied (100) and (111)Si/SiO2 interfaces. At all three Si crystal faces, the interface trap density D-it as function of energy E in the

Si band gap exhibits two peaks at about 0.25 and 0.85 eV above the Si valence band, found to be well correlated with P-b(0) centers (Si-3 Si center dot defects). By comparing capacitance-voltage (CV) curves at 300 and 77 K of both n- and p-type samples, the P-b(0) defects are confirmed to be amphoteric. Effective JQ-EZ-05 order passivation of interface traps by H-2 annealing suggests that P-b0 defects are responsible for most of interface traps observed in (110)Si/SiO2. The truly amphoteric behavior, implying that one P-b0 defect delivers two interface trap levels, was observed for the (100) and (111)Si faces but not for the (110) face. The estimated interface trap density Nit at the (110)Si/SiO2 interface oxidized at 930 degrees C is (6.7 +/- 0.5) x 10(12), while the P-b0 density as determined by ESR is about (6 x 1) x 10(12) cm(-2). Lowering of the oxidation temperature leads to further reduction in the electrically active P-b0 centers fraction at the (110)Si/SiO2 interface. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3527909]“
“Unraveling the mysteries behind the perception and response to iron deficiency has resulted in a vast collection of data that is summarized under the topic “”ferromics”". The analysis of the immediate effects induced by iron deficiency has been facilitated and in most cases greatly accelerated by the development of analytical and computational tools.