Therefore, the unusual reset process demonstrates that Joule heat

Therefore, the unusual reset process demonstrates that Joule heating rather than electric field effect might be the main factor in rupturing the conductive filaments as shown in Figure 5b. It is also the reason that BRS is preferred with higher CC to generate

enough Joule heating to overcome the effect of electric field on oxygen ion movement. Similarly, the set process of URS is mainly dominated by the oxygen migration from ITO to Al/NiO interface. Nevertheless, a low CC can trigger the occurrence of reset process during the measurement of URS because no additional electromigration happens as shown in Figure 5c. If switching CC is reduced to 3 mA, it means there is insufficient heating to rupture the same Doramapimod molecular weight thick or dense filaments at the same forming process as the BRS behavior. This would lead to unstable resistive switching as shown in Figure 4a,b. At last, it will evolve to a volatile TRS due to a spontaneous rupture of filaments of insufficient heat dissipation induced by the Joule heating [8]. Figure 5 Oxygen migration at the top and bottom interfaces of the NiO layer and Joule heating effect. (a) BRS set process. (b) BRS reset process. (c) URS reset process. Conclusions NiO thin films were prepared by solution route with nickel acetate as the metal source. By control forming and switching CC, URS, BRS, and TRS were found in the same Al/NiO/ITO

device. URS existed at low-forming CC, while BRS at high-forming CC, which was different from previous reports. From the fitting curves of I-V, the HRS at low voltage this website and LRS were dominated by Ohmic conduction, and the HRS at high voltage could be attributed to the PF emission that involves Phospholipase D1 thermal effects and trap sites such as oxygen vacancies. The switching mechanism was discussed based on the dual-oxygen reservoir structure model in which the ITO electrode and Al/NiO interface acts

as the oxygen reservoirs. No matter what the direction of the electric field is, the dual-oxygen reservoir structure will support the oxygen vacancies to form the conductive filaments. The reset process indicates that Joule heating might be the main factor in rupturing the conductive filaments. When the forming and switching CC was equal, we found TRS after several loop tests. It was caused by spontaneous rupture of the filaments of insufficient heat dissipation at higher CC due to the Joule heating. The tunable switching properties would enable large flexibility in terms of device application. Acknowledgements This work has been supported by the Open Project of the State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials (No. 11zxfk26), the Fundamental Research Funds for the Central Universities (ZYGX2012J032), and the Open Foundation of the State Key Laboratory of AZD8186 datasheet Electronic Thin Films and Integrated Devices (KFJJ201307). References 1.

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